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| FDS8949 Dual N-Channel Logic Level PowerTrench(R) MOSFET October 2006 FDS8949 Dual N-Channel Logic Level PowerTrench(R) MOSFET 40V, 6A, 29m Features Max rDS(on) = 29m at VGS = 10V Max rDS(on) = 36m at VGS = 4.5V Low gate charge High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS compliant tm General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench(R) process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications Inverter Power suppliers D2 D2 D1 D1 SO-8 Pin 1 S1 G1 G2 S2 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Drain-Source Avalanche Energy Power Dissipation for Dual Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 3) (Note 1a) Ratings 40 20 6 20 26 2 1.6 0.9 -55 to 150 C W Units V V A mJ Thermal Characteristics RJA RJA RJC Thermal Resistance-Single operation, Junction to Ambient Thermal Resistance-Single operation, Junction to Ambient Thermal Resistance, Junction to Case (Note 1a) (Note 1b) (Note 1) 81 135 40 C/W Package Marking and Ordering Information Device Marking FDS8949 Device FDS8949 Reel Size 13'' Tape Width 12mm Quantity 2500 units (c)2006 Fairchild Semiconductor Corporation FDS8949 Rev. B1 1 www.fairchildsemi.com FDS8949 Dual N-Channel Logic Level PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, referenced to 25C VDS = 32V, VGS = 0V TJ = 55C VGS = 20V,VDS = 0V 40 33 1 10 100 V mV/C A A nA On Characteristics (Note 2) VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 6A VGS = 4.5V, ID = 4.5A VGS = 10V, ID = 6A,TJ = 125C VDS = 10V,ID = 6A 1 1.9 -4.6 21 26 29 22 29 36 43 S m 3 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 20V, VGS = 0V, f = 1MHz f = 1MHz 715 105 60 1.1 955 140 90 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller"Charge VDS = 20V, ID = 6A,VGS = 5V VDD = 20V, ID = 1A VGS = 10V, RGEN = 6 9 5 23 3 7.7 2.4 2.8 18 10 37 6 11 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings VSD trr Qrr Source to Drain Diode Forward Voltage VGS = 0V, IS = 6A (note 2) Reverse Recovery Time (note 3) Reverse Recovery Charge IF = 6A, diF/dt = 100A/s 0.8 17 7 1.2 26 11 V ns nC Notes: 1: RJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a) 81C/W when mounted on a 1in2 pad of 2 oz copper b) 135C/W when mounted on a minimum pad . Scale 1:1 on letter size paper 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. 3: Starting TJ = 25C, L = 1mH, IAS = 7.3A, VDD = 40V, VGS = 10V. FDS8949 Rev. B1 2 www.fairchildsemi.com FDS8949 Dual N-Channel Logic Level PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 20 VGS = 3.5V VGS = 4.5V 3.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10V PULSE DURATION = 300s DUTY CYCLE = 20%MAX 16 ID, DRAIN CURRENT (A) 2.5 2.0 1.5 1.0 0.5 VGS = 3.0V VGS = 3.5V 12 8 4 0 0.0 PULSE DURATION = 300s DUTY CYCLE = 20%MAX VGS = 3.0V VGS = 4.5V VGS = 10V 0.5 1.0 1.5 2.0 2.5 0 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 8 12 ID, DRAIN CURRENT(A) 16 20 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 70 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID = 6A VGS = 10V ID = 3.5A 60 50 40 PULSE DURATION = 300s DUTY CYCLE = 20%MAX TJ = 125oC 30 20 TJ = 25oC -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 10 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Temperature 20 Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) PULSE DURATION = 300s DUTY CYCLE = 20%MAX 16 12 8 4 0 1.5 TJ = 125oC VDD = 10V VGS = 0V 10 1 0.1 0.01 1E-3 0.2 TJ = -55oC TJ = 125oC TJ = 25oC TJ = 25oC TJ = -55oC 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.0 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDS8949 Rev. B1 FDS8949 Dual N-Channel Logic Level PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 10V 10 3 Ciss 8 6 4 2 0 VDD = 20V VDD = 30V CAPACITANCE (pF) Coss 10 2 Crss 0 4 8 12 Qg, GATE CHARGE(nC) 16 10 1 f = 1MHz VGS = 0V 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 Figure 7. Gate Charge Characteristics 10 IAS, AVALANCHE CURRENT(A) Figure 8. Capacitance vs Drain to Source Voltage 7 6 ID, DRAIN CURRENT (A) 5 4 3 2 1 0 25 RJA = 81 C/W o VGS = 10V 1 TJ = 125oC TJ = 25oC VGS = 4.5V 0.1 -3 10 10 -2 10 10 10 10 tAV, TIME IN AVALANCHE(ms) -1 0 1 2 10 3 50 75 100 125 150 TA, Ambient TEMPERATURE (oC) Figure 9. Unclamped Inductive Switching Capability 100 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 100 P(PK), PEAK TRANSIENT POWER (W) VGS = 10V ID, DRAIN CURRENT (A) 10 100us 1ms 1 LIMITED BY PACKAGE 10ms 100ms SINGLE PULSE TJ = MAX RATED TA = 25oC 10 SINGLE PULSE RJA = 135C/W TA = 25C 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1s 10s DC SINGLE PULSE 0.01 0.01 0.1 1 10 100 300 1 0.7 -4 10 10 -3 VDS, DRAIN-SOURCE VOLTAGE (V) 10 10 10 10 t, PULSE WIDTH (s) -2 -1 0 1 10 2 10 3 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDS8949 Rev. B1 4 www.fairchildsemi.com FDS8949 Dual N-Channel Logic Level PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 NORMALIZED THERMAL IMPEDANCE, ZJA 0.1 P(PK) t1 t2 RJA(t) = r(t)*RJA RJA = 135oC/W TJ-TA =P*RJA 0.01 DUTY FACTOR: D = t1/t2 -2 -1 0 1 2 SINGLE PULSE 1E-3 -3 10 10 10 10 10 10 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDS8949 Rev. B1 5 www.fairchildsemi.com FDS8949 Dual N-Channel Logic Level PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 Preliminary No Identification Needed Full Production Obsolete Not In Production FDS8949 Rev. B1 6 www.fairchildsemi.com |
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